Serveur d'exploration sur le nickel au Maghreb

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Optical and electrical properties of nickel oxide thin films synthesized by sol-gel spin coating

Identifieur interne : 000103 ( Main/Exploration ); précédent : 000102; suivant : 000104

Optical and electrical properties of nickel oxide thin films synthesized by sol-gel spin coating

Auteurs : M. Jlassi [Tunisie] ; I. Sta [Tunisie] ; M. Hajji [Tunisie] ; H. Ezzaouia [Tunisie]

Source :

RBID : Pascal:14-0239983

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Abstract

Nickel oxide thin films were prepared by the sol-gel technique combined with spin coating onto glass substrates. The as-deposited films were pre-heated at 275 °C for 15 min and then annealed in air at different temperatures. The effects of the annealing temperature on the structural and optical properties of the films are studied. The results show that 600 °C is the optimum annealing temperature for preparation of NiO films with p-type conductivity and high optical transparency. Then, by using these optimized deposition parameters, NiO thin films of various thicknesses were deposited at the same experimental conditions and annealed under different atmospheres. Surface morphology of the films was investigated by atomic force microscopy. The surface morphology of the films varies with the annealing atmosphere. Optical transmission was studied by UV-vis spectrophotometer. The transmittance of films decreased as the thickness of films increased. The electrical resistivity, obtained by four-point probe measurements, was improved when NiO layers were annealed in N2 atmosphere at 600 °C.


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<div type="abstract" xml:lang="en">Nickel oxide thin films were prepared by the sol-gel technique combined with spin coating onto glass substrates. The as-deposited films were pre-heated at 275 °C for 15 min and then annealed in air at different temperatures. The effects of the annealing temperature on the structural and optical properties of the films are studied. The results show that 600 °C is the optimum annealing temperature for preparation of NiO films with p-type conductivity and high optical transparency. Then, by using these optimized deposition parameters, NiO thin films of various thicknesses were deposited at the same experimental conditions and annealed under different atmospheres. Surface morphology of the films was investigated by atomic force microscopy. The surface morphology of the films varies with the annealing atmosphere. Optical transmission was studied by UV-vis spectrophotometer. The transmittance of films decreased as the thickness of films increased. The electrical resistivity, obtained by four-point probe measurements, was improved when NiO layers were annealed in N
<sub>2</sub>
atmosphere at 600 °C.</div>
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